QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

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MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
Country/Region:china
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MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors

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Brand Name :ON
Model Number :MMBT5551LT1G
Place of Origin :ON
MOQ :3000
Price :Can discuss
Payment Terms :T/T
Supply Ability :10000
Delivery Time :5-8 working days
Packaging Details :Carton packaging
Manufacturer :onsemi
Product Category :Bipolar Transistors - BJT
Mounting Style :SMD/SMT
Package / Case :SOT-23-3
Transistor Polarity :NPN
Configuration :Single
Collector- Emitter Voltage VCEO Max :160 V
Collector- Base Voltage VCBO :180 V
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MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors

MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN

onsemi
Bipolar Transistors - BJT
RoHS: Details
SMD/SMT
SOT-23-3
NPN
Single
160 V
180 V
6 V
200 mV
600 mA
225 mW
-
- 55 C
+ 150 C
MMBT5551L
Reel
Cut Tape
MouseReel
Brand: onsemi
Continuous Collector Current: 0.6 A
DC Collector/Base Gain hfe Min: 80
DC Current Gain hFE Max: 250
Height: 0.94 mm
Length: 2.9 mm
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity 3000
Subcategory: Transistors
Technology: Si
Width: 1.3 mm
Unit Weight: 0.000282 oz
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